Now showing items 1-4 of 4

    • Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes 

      Nagy, Daniel; Espiñeira Deus, Gabriel; Indalecio Fernández, Guillermo; García Loureiro, Antonio Jesús; Kalna, Karol; Seoane Iglesias, Natalia (IEEE, 2020)
      Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (L G ) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte ...
    • Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs 

      Nagy, Daniel; Indalecio Fernández, Guillermo; García Loureiro, Antonio Jesús; Espiñeira Deus, Gabriel; Elmessary, Muhammad A.; Kalna, Karol; Seoane Iglesias, Natalia (IEEE, 2019)
      Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device ...
    • A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs 

      Seoane Iglesias, Natalia; Nagy, Daniel; Indalecio Fernández, Guillermo; Espiñeira Deus, Gabriel; Kalna, Karol; García Loureiro, Antonio Jesús (MDPI, 2019)
      An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate ...
    • Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations 

      Indalecio Fernández, Guillermo; García Loureiro, Antonio Jesús; Elmessary, Muhammad A.; Kalna, Karol; Seoane Iglesias, Natalia (IEEE, 2018)
      Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design ...





      Harvesters:Interesting links:
      Universidade de Santiago de Compostela | Teléfonos: +34 881 811 000 e +34 982 820 000 | Contact Us | Send Feedback