Now showing items 1-5 of 5
Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device ...
FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate ...
A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate ...
Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (L G ) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte ...
Impact of threshold voltage extraction methods on semiconductor device variability
This paper presents a study of the impact that several widely used threshold voltage (VT) extraction methods have on semiconductor device variability studies. The second derivative (SD), linear extrapolation (LE) and third ...