Search
Now showing items 1-10 of 11
FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
(IEEE, 2018)
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate ...
Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations
(IEEE, 2018)
Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design ...
Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs
(IEEE, 2019)
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device ...
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
(MDPI, 2020)
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects ...
Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes
(ITMO University, 2017)
Short channel effects, such as DIBL are compared for SOI-FinFETs with different silicon body geometries. The original device considered was
straight without narrowing at the top and a set of devices that exhibit the ...
Study of basic vector operations on Intel Xeon Phi and NVIDIA Tesla using OpenCL
(Universidad de Granada, 2015)
The present work is an analysis of the performance of the basic vector operations AXPY,
DOT and SpMV using OpenCL. The code was tested on the NVIDIA Tesla S2050 GPU and
Intel Xeon Phi 3120A coprocessor. Due to the nature ...
Evaluación del rendimiento de hipervisores usados en infraestructuras cloud que aprovechan la virtualización por hardware
(Portal de la Ciencia, 2014)
El presente artículo muestra los resultados de un conjunto de benchmarks en
anfitriones y máquinas virtuales gestionadas con los hipervisores Xen y KVM,
aprovechando el soporte vía hardware para la virtualización del ...
Analysis of high concentrator photovoltaic modules in outdoor conditions: Influence of direct normal irradiance, air temperature, and air mass
(AIP Publishing, 2014)
The study of high concentrator photovoltaic (HCPV) technology under real
conditions is essential to understand its real behavior. The influence of direct
normal irradiance (DNI), air temperature (Tair), and air mass (AM) ...
Spin-polarized transport in a full magnetic pn tunnel junction
(AIP Publishing, 2011)
Simulations of the tunneling current as a function of voltage and temperature for a Zener diode
where both sides are ferromagnetic have been performed. The current is evaluated as a function
of the applied bias, the ...
Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes
(IEEE, 2020)
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (L G ) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte ...