Thickness dependence of exchange coupling in epitaxial Fe3 O4/ CoFe2 O4 soft/hard magnetic bilayers
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Título: | Thickness dependence of exchange coupling in epitaxial Fe3 O4/ CoFe2 O4 soft/hard magnetic bilayers |
Autor/a: | Lavorato, Gabriel Carlos Winkler, Elin L. Rivas Murias, Beatriz Rivadulla, Francisco |
Centro/Departamento: | Universidade de Santiago de Compostela. Centro de Investigación en Química Biolóxica e Materiais Moleculares Universidade de Santiago de Compostela. Departamento de Química Física |
Palabras chave: | Condensed Matter | Materials Physics | Exchange interaction | Spinel | Bilayer films | Multilayer thin films | Oxides | |
Data: | 2016 |
Editor: | APS Physics |
Cita bibliográfica: | Lavorato, G., Winkler, E., Rivas-Murias, B., & Rivadulla, F. (2016). Thickness dependence of exchange coupling in epitaxial Fe3 O4/CoFe2 O4 soft/hard magnetic bilayers. Physical Review B, 94(5). doi: 10.1103/physrevb.94.054405 |
Resumo: | Epitaxial magnetic heterostructures of ( soft − ) Fe 3 O 4 / ( hard − ) CoFe 2 O 4 ( 001 ) have been fabricated with a varying thicknesses of soft ferrite from 5 to 25 nm. We report a change in the regime of magnetic interaction between the layers from rigid-coupling to exchange-spring behavior, above a critical thickness of the soft magnetic Fe 3 O 4 layer. We show that the symmetry and epitaxial matching between the spinel structures of CoFe 2 O 4 and Fe 3 O 4 at the interface stabilize the Verwey transition close to the bulk value even for 5-nm-thick Fe 3 O 4 . The large interface exchange-coupling constant estimated from low-temperature M ( H ) data confirmed the good quality of the ferrite-ferrite interface and the major role played by the interface in the magnetization dynamics. The results presented here constitute a model system for understanding the magnetic behavior of interfaces in core/shell nanoparticles and magnetic oxide-based spintronic devices |
Versión do editor: | https://doi.org/10.1103/PhysRevB.94.054405 |
URI: | http://hdl.handle.net/10347/17029 |
DOI: | 10.1103/PhysRevB.94.054405 |
ISSN: | 2469-9950 |
E-ISSN: | 2469-9969 |
Dereitos: | © 2016 American Physical Society |
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