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dc.contributor.author | Bach, P. L. |
dc.contributor.author | Vila-Fungueiriño, José M. |
dc.contributor.author | Leborán Alvarez, Víctor |
dc.contributor.author | Ferreiro Vila, Elías |
dc.contributor.author | Rodríguez-González, Benito |
dc.contributor.author | Rivadulla Fernández, José Francisco |
dc.date.accessioned | 2018-07-16T10:17:36Z |
dc.date.available | 2018-07-16T10:17:36Z |
dc.date.issued | 2013 |
dc.identifier.citation | Bach, P., Vila-Fungueiriño, J., Leborán, V., Ferreiro-Vila, E., Rodríguez-González, B., & Rivadulla, F. (2013). Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ. APL Materials, 1(2), 021101. doi: 10.1063/1.4818356 |
dc.identifier.uri | http://hdl.handle.net/10347/17039 |
dc.description.abstract | We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors |
dc.description.sponsorship | This work was supported by the European Research Council (ERC StG-259082, 2DTHERMS), and Ministerio de Economía y Competitividad of Spain through the project MAT2010-16157, and a Ph.D. grant of the FPI program (J.M.V.-F.) |
dc.language.iso | eng |
dc.publisher | AIP Publishing |
dc.rights | © 2013 The Author(s). Published by AIP Publishing. This work is is licensed under a Creative Commons Attribution 3.0 Unported License |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ |
dc.title | Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ |
dc.type | journal article |
dc.identifier.doi | 10.1063/1.4818356 |
dc.relation.publisherversion | https://doi.org/10.1063/1.4818356 |
dc.type.hasVersion | VoR |
dc.identifier.essn | 2166-532X |
dc.rights.accessRights | open access |
dc.contributor.affiliation | Universidade de Santiago de Compostela. Centro de Investigación en Química Biolóxica e Materiais Moleculares |
dc.contributor.affiliation | Universidade de Santiago de Compostela. Departamento de Química Física |
dc.description.peerreviewed | SI |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/259082 |
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