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dc.contributor.authorBlanco Filgueira, Beatriz
dc.contributor.authorLópez Martínez, Paula
dc.contributor.authorRoldán Aranda, Juan Bautista
dc.date.accessioned2019-03-12T14:22:13Z
dc.date.available2019-03-12T14:22:13Z
dc.date.issued2013-08-20
dc.identifier.citationBeatriz Blanco-Filgueira, Paula López Martínez, and Juan Bautista Roldán Aranda (2013) A closedform and explicit analytical model for crosstalk in CMOS photodiodes. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(10), 3459-3464. Doi: 10.1109/TED.2013.2276748
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/10347/18339
dc.description.abstractA closed-form and explicit 2-D analytical model for crosstalk(CTK) effects in p-n + CMOS photodiodes for pixel design optimization has been developed in this paper. This model complements and extends a previous development describing the photocurrent because of the active area illumination along with the lateral depletion region and lateral components owing to the diffused photocarriers from the surroundings of the junction. The model has very few fitting parameters because it is physically based. Similarly, it can be of great use for CMOS image sensors designers, especially to fulfill high resolution and small area requirements by pixel size reduction. The model was validated extensively through device simulations with ATLAS and experimental data, and describes the CTK dependencies on light conditions and physical, geometrical, and process parameters
dc.description.sponsorshipThis work has been partially supported by the Spanish Government under projects TEC2009-12686 and TEC2012-38921-C02-02 (co-funded by the European Region Development Fund, ERDF/FEDER), by the Xunta de Galicia under project 10PXIB206037PR, by the Junta de Andalucía under project P08-TIC-3580 and by AE CITIUS under the project CN2012/151 of the Xunta de Galicia (ERDF/FEDER)
dc.language.isoeng
dc.publisherIEEE
dc.relationinfo:eu-repo/grantAgreement/MICINN/Plan Nacional de I+D+i 2008-2011/TEC2009-12686/ES/Modelado De Pixeles En Tecnologias Cmos Sub-100Nm
dc.rights© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
dc.subjectCrosstalk (CTK)
dc.subjectModeling
dc.subjectPhotodiodes (PDs)
dc.subjectSimulation
dc.titleClosed-Form and Explicit Analytical Model for Crosstalk in CMOS Photodiodes
dc.typeinfo:eu-repo/semantics/article
dc.identifier.DOI10.1109/TED.2013.2276748
dc.relation.publisherversionhttps://doi.org/10.1109/TED.2013.2276748
dc.type.versioninfo:eu-repo/semantics/acceptedVersion
dc.rights.accessrightsinfo:eu-repo/semantics/openAccess
dc.contributor.affiliationUniversidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Información
dc.contributor.affiliationUniversidade de Santiago de Compostela. Departamento de Electrónica e Computación
dc.description.peerreviewedSI


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