Show simple item record

dc.contributor.authorOtero Fumega, Adolfo
dc.contributor.authorPardo Castro, Víctor
dc.date.accessioned2019-12-12T09:22:55Z
dc.date.available2019-12-12T09:22:55Z
dc.date.issued2017-10-06
dc.identifier.citationPHYSICAL REVIEW MATERIALS 1, 054403 (2017)
dc.identifier.urihttp://hdl.handle.net/10347/20437
dc.description.abstractThis paper shows that the oxygen vacancies observed experimentally in thin films of LaCoO3 subject to tensile strain are thermodynamically stable according to ab initio calculations. By using DFT calculations, we show that oxygen vacancies on the order of 6% forming chains perpendicular to the (001) direction are more stable than the stoichiometric solution. These lead to magnetic Co2+ ions surrounding the vacancies that couple ferromagnetically. The remaining Co3+ cations in an octahedral environment are nonmagnetic. The gap leading to a ferromagnetic insulating phase occurs naturally and we provide a simple ionic picture to explain the resulting electronic structure
dc.description.sponsorshipThis work has been supported by the MINECO of Spain through the project MAT2016-80762-R
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.relationinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2016-80762-R/ES
dc.rights©2017 American Physical Society
dc.subjectCrystal defects
dc.subjectCrystal structure
dc.subjectElectronic structure
dc.subjectFerromagnetism
dc.subjectMagnetic insulators
dc.subjectOxides
dc.subjectCrystal-field theory
dc.subjectDensity functional theory
dc.subjectCondensed Matter & Materials Physics
dc.titleFerromagnetic and insulating behavior of LaCoO3 films grown on a (001) SrTiO3 substrate: A simple ionic picture explained ab initio
dc.typeinfo:eu-repo/semantics/article
dc.identifier.DOI10.1103/PhysRevMaterials.1.054403
dc.relation.publisherversionhttps://doi.org/10.1103/PhysRevMaterials.1.054403
dc.type.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.e-issn2475-9953
dc.rights.accessrightsinfo:eu-repo/semantics/openAccess
dc.contributor.affiliationUniversidade de Santiago de Compostela. Departamento de Física Aplicada
dc.contributor.affiliationUniversidade de Santiago de Compostela. Instituto de Investigacións Tecnolóxicas
dc.description.peerreviewedSI


Files in this item

application/pdf
Name: PhysRevMaterials.1.054403.pdf
Size: 1.802 Mb
Format: PDF


Thumbnail

This item appears in the following Collection(s)

Show simple item record






Harvesters:Useful links:
Universidade de Santiago de Compostela | Teléfonos: +34 881 811 000 e +34 982 820 000 | Contact Us | Send Feedback