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Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs
(IEEE, 2019)
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device ...
A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
(MDPI, 2019)
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate ...
Parallel approach of Schrödinger-based quantum corrections for ultrascaled semiconductor devices
(Springer, 2022)
In the current technology node, purely classical numerical simulators lack the precision needed to obtain valid results. At the same time, the simulation of fully quantum models can be a cumbersome task in certain studies ...